Background-suppression photoelectric sensor
- Commodity name： Background-suppression photoelectric sensor
- Product Description
- Zixing parameters
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Project Through-beam type Reflective lens type Diffuse reflection type NPN B3Z‑T61 B3Z‑R61 B3Z‑D61, B3Z‑D62 PNP B3Z‑T81 B3Z‑R81 B3Z‑D81, B3Z‑D82 Detection distance 15M 4M 10 cm, 30 cm Test substance 100×100mm white paper Opaque objects with a diameter ≥ 5 mm Opaque objects with a diameter ≥ 12 mm Light source (wavelength) GaAs infrared light-emitting diode
Consumed current ≤25mA ≤25mA ≤45mA Control Output Load current: 100 mA or less (residual voltage: 1 V or less)
Circuit protection Surge protection circuit, short-circuit protection, reverse polarity protection
Response time Action / Response: each under 1.0 ms
Indicator light Action indicator light (red)
Ambient temperature Operating temperature: -25 to +55°C (no icing, no frost); Storage temperature: -40 to +70°C (no icing, no frost)
Ambient illumination impact Daylight: below 10,000 lux; Incandescent lamp: below 3,000 lux
Operating ambient humidity During operation: 45%–85% RH (no icing); during storage: 35%–85% RH (no icing)
The effect of voltage When the rated supply voltage varies within ±15%, the detection distance changes by no more than ±1%.
Insulation impedance Greater than 20 MΩ (using a DC 500 V megger) between the charging unit and the enclosure.
Dielectric strength Above AC 1000 V, at 50/60 Hz, for 1 minute, between the charging unit and the enclosure.
Vibration (Durability) 10–50 Hz, 1.5 mm double amplitude, with a duration of 1 hour in each of the X, Y, and Z directions.
Impact (Durability) 500 m/s² double amplitude, 3 times in each of the X, Y, and Z directions.
Protective structure IP65
Linking method Wire lead-out type (standard 2 m)
Housing material PC
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